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MUR180E, MUR1100E
MUR1100E is a Preferred Device
SWITCHMODETM Power Rectifiers
Ultrafast "E" Series with High Reverse Energy Capability
. . . designed for use in switching power supplies, inverters and as free wheeling diodes, these state-of-the-art devices have the following features:
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* 10 mjoules Avalanche Energy Guaranteed * Excellent Protection Against Voltage Transients in Switching * * * * * *
Inductive Load Circuits Ultrafast 75 Nanosecond Recovery Time 175C Operating Junction Temperature Low Forward Voltage Low Leakage Current High Temperature Glass Passivated Junction Reverse Voltage to 1000 Volts
ULTRAFAST RECTIFIERS 1.0 AMPERES 800-1000 VOLTS
Mechanical Characteristics:
* Case: Epoxy, Molded * Weight: 0.4 gram (approximately) * Finish: All External Surfaces Corrosion Resistant and Terminal * Lead and Mounting Surface Temperature for Soldering Purposes: * * * *
220C Max. for 10 Seconds, 1/16 from case Shipped in plastic bags, 1000 per bag Available Tape and Reeled, 5000 per reel, by adding a "RL'' suffix to the part number Polarity: Cathode Indicated by Polarity Band Marking: MUR180E, MUR1100E Leads are Readily Solderable
AXIAL LEAD CASE 059-10 PLASTIC
MARKING DIAGRAM
MUR1x0E
MAXIMUM RATINGS
Rating Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage MUR180E MUR1100E Average Rectified Forward Current (Note 1.) (Square Wave Mounting Method #3 Per Note 3.) Non-Repetitive Peak Surge Current (Surge applied at rated load conditions, halfwave, single phase, 60 Hz) Operating Junction Temperature and Storage Temperature Range Symbol VRRM VRWM VR IF(AV) Value Unit V
MUR1x0E = Device Code x = 8 or 10
ORDERING INFORMATION
800 1000 1.0 @ TA = 95C 35 A Device MUR180E MUR180ERL A MUR1100E MUR1100ERL Package Axial Lead Axial Lead Axial Lead Axial Lead Shipping 1000 Units/Bag 5000/Tape & Reel 1000 Units/Bag 5000/Tape & Reel
IFSM
TJ, Tstg
-65 to +175
C
Preferred devices are recommended choices for future use and best overall value.
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle 2.0%.
(c) Semiconductor Components Industries, LLC, 2002
1
August, 2002 - Rev. 1
Publication Order Number: MUR180E/D
MUR180E, MUR1100E
THERMAL CHARACTERISTICS
Rating Maximum Thermal Resistance, Junction to Ambient Symbol RqJA Value See Note 3. Unit C/W
ELECTRICAL CHARACTERISTICS
Maximum Instantaneous Forward Voltage (Note 2.) (iF = 1.0 Amp, TJ = 150C) (iF = 1.0 Amp, TJ = 25C) Maximum Instantaneous Reverse Current (Note 2.) (Rated dc Voltage, TJ = 100C) (Rated dc Voltage, TJ = 25C) Maximum Reverse Recovery Time (IF = 1.0 Amp, di/dt = 50 Amp/ms) (IF = 0.5 Amp, iR = 1.0 Amp, IREC = 0.25 Amp) Maximum Forward Recovery Time (IF = 1.0 Amp, di/dt = 100 Amp/ms, Recovery to 1.0 V) Controlled Avalanche Energy (See Test Circuit in Figure 6) 2. Pulse Test: Pulse Width = 300 ms, Duty Cycle 2.0%. vF 1.50 1.75 iR 600 10 trr 100 75 tfr WAVAL 75 10 ns mJ ns mA Volts
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MUR180E, MUR1100E
ELECTRICAL CHARACTERISTICS
1000 IR, REVERSE CURRENT (m A) 100 10 1.0 25C 0.1 0.01 TJ = 175C
20
10 7.0 5.0 i F , INSTANTANEOUS FORWARD CURRENT (AMPS) 3.0 2.0
100C
TJ = 175C
25C 100C
1.0 0.7 0.5 0.3 0.2 IF(AV) , AVERAGE FORWARD CURRENT (AMPS)
0
100
200
300
400
500
600
700
800
900 1000
VR, REVERSE VOLTAGE (VOLTS)
Figure 2. Typical Reverse Current*
* The curves shown are typical for the highest voltage device in the grouping. Typical reverse current for lower voltage selections can be estimated from these same curves if VR is sufficiently below rated VR. 5.0 4.0 3.0 2.0 1.0 0 SQUARE WAVE
0.1 0.07 0.05 0.03 0.02 0.01
RATED VR RqJA = 50C/W
dc
0.3 0.5
0.7
0.9
1.1
1.3
1.5
1.7
1.9
2.1
2.3
vF, INSTANTANEOUS VOLTAGE (VOLTS)
0
50
100
150
200
250
Figure 1. Typical Forward Voltage
TA, AMBIENT TEMPERATURE (C)
Figure 3. Current Derating (Mounting Method #3 Per Note 1)
PF(AV) , AVERAGE POWER DISSIPATION (WATTS) 5.0 4.0 3.0 TJ = 175C 2.0 1.0 0 (CAPACITIVE LOAD) PK + 20 I I 10 5.0 20 TJ = 25C C, CAPACITANCE (pF) 2.5 10 7.0 5.0
AV
dc SQUARE WAVE
3.0 0 0.5 1.0 1.5 2.0 2.0 0 10 20 30 40 50
IF(AV), AVERAGE FORWARD CURRENT (AMPS)
VR, REVERSE VOLTAGE (VOLTS)
Figure 4. Power Dissipation
Figure 5. Typical Capacitance
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MUR180E, MUR1100E
+VDD IL 40 mH COIL VD MERCURY SWITCH ID IL ID VDD t0 t1 t2 t BVDUT
S1
DUT
Figure 6. Test Circuit
Figure 7. Current-Voltage Waveforms
The unclamped inductive switching circuit shown in Figure 6 was used to demonstrate the controlled avalanche capability of the new "E'' series Ultrafast rectifiers. A mercury switch was used instead of an electronic switch to simulate a noisy environment when the switch was being opened. When S1 is closed at t0 the current in the inductor IL ramps up linearly; and energy is stored in the coil. At t1 the switch is opened and the voltage across the diode under test begins to rise rapidly, due to di/dt effects, when this induced voltage reaches the breakdown voltage of the diode, it is clamped at BVDUT and the diode begins to conduct the full load current which now starts to decay linearly through the diode, and goes to zero at t2. By solving the loop equation at the point in time when S1 is opened; and calculating the energy that is transferred to the diode it can be shown that the total energy transferred is equal to the energy stored in the inductor plus a finite amount of energy from the VDD power supply while the diode is in breakdown (from t1 to t2) minus any losses due to finite
EQUATION (1): BV 2 DUT W [ 1 LI LPK AVAL 2 BV -V DUT DD
CH1 CH2 500V 50mV
component resistances. Assuming the component resistive elements are small Equation (1) approximates the total energy transferred to the diode. It can be seen from this equation that if the VDD voltage is low compared to the breakdown voltage of the device, the amount of energy contributed by the supply during breakdown is small and the total energy can be assumed to be nearly equal to the energy stored in the coil during the time when S1 was closed, Equation (2). The oscilloscope picture in Figure 8, shows the information obtained for the MUR8100E (similar die construction as the MUR1100E Series) in this test circuit conducting a peak current of one ampere at a breakdown voltage of 1300 volts, and using Equation (2) the energy absorbed by the MUR8100E is approximately 20 mjoules. Although it is not recommended to design for this condition, the new "E'' series provides added protection against those unforeseen transient viruses that can produce unexplained random failures in unfriendly environments.
CHANNEL 2: IL 0.5 AMPS/DIV.
A
20ms
953 V
VERT
EQUATION (2): 2 W [ 1 LI LPK AVAL 2
1 CH1 ACQUISITIONS SAVEREF SOURCE CH2 217:33 HRS STACK REF REF
CHANNEL 1: VDUT 500 VOLTS/DIV.
TIME BASE: 20 ms/DIV.
Figure 8. Current-Voltage Waveforms
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MUR180E, MUR1100E
NOTE 3. -- AMBIENT MOUNTING DATA
Data shown for thermal resistance junction to ambient (RqJA) for the mountings shown is to be used as typical guideline values for preliminary engineering or in case the tie point temperature cannot be measured.
TYPICAL VALUES FOR RqJA IN STILL AIR Mounting Method 1 2 RqJA 3 Lead Length, L 1/4 1/2 1/8 52 65 72 67 80 87 50 Units C/W C/W C/W
MOUNTING METHOD 1
L
L
EEEEEEEEEEEE EEEEEEEEEEEE
Vector Pin Mounting MOUNTING METHOD 3
EEEEEEEEEEE EEEEEEEEEEE
MOUNTING METHOD 2
L L
EE EE EE EE EE EE EE EE
L = 3/8
Board Ground Plane
P.C. Board with 1-1/2 X 1-1/2 Copper Surface
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MUR180E, MUR1100E
PACKAGE DIMENSIONS
MINI MOSORB CASE 59-10 ISSUE S
B
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 59-04 OBSOLETE, NEW STANDARD 59-09. 4. 59-03 OBSOLETE, NEW STANDARD 59-10. 5. ALL RULES AND NOTES ASSOCIATED WITH JEDEC DO-41 OUTLINE SHALL APPLY 6. POLARITY DENOTED BY CATHODE BAND. 7. LEAD DIAMETER NOT CONTROLLED WITHIN F DIMENSION. DIM A B D F K INCHES MIN MAX 0.161 0.205 0.079 0.106 0.028 0.034 --0.050 1.000 --MILLIMETERS MIN MAX 4.10 5.20 2.00 2.70 0.71 0.86 --1.27 25.40 ---
K F
D
A F K
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MUR180E, MUR1100E
Notes
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MUR180E, MUR1100E
SWITCHMODE is a trademark of Semiconductor Components Industries, LLC.
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer.
PUBLICATION ORDERING INFORMATION
Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: ONlit@hibbertco.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada JAPAN: ON Semiconductor, Japan Customer Focus Center 2-9-1 Kamimeguro, Meguro-ku, Tokyo, Japan 153-0051 Phone: 81-3-5773-3850 Email: r14525@onsemi.com ON Semiconductor Website: http://onsemi.com For additional information, please contact your local Sales Representative.
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MUR180E/D

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